NDC7001C Datasheet Dual N&P-Channel MOSFET

Manufacturer: onsemi

Datasheet Details

These dual N & P−Channel Enhancement Mode Field Effect Transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process has been designed to minimize on−state resistance, provide rugged and reliable performance and fast switching.

These device is particularly suited for low voltage, low current, switching, and power supply application.

Field Effect Transistor Dual, N & P-Channel, Enhancement Mode NDC7001C.

Q1 0.51 A, 60 V RDS(ON) = 2 W @ VGS = 10 V RDS(ON) = 4 W @ VGS = 4.5 V.
Q2.
0.34 A, 60 V RDS(ON) = 5 W @ VGS =.
10 V RDS(ON) = 7.5 W @ VGS =.
4.5 V.
High Saturation Current.
High Density Cell Design for Low RDS(ON).
Proprietary SUPERSOTt.
6 Package Design Using Copper Lead Frame for Superior Thermal and Electrical Capabilities.
This is a Pb.
Free Device.

Brand Logo	Part Number	Description	Manufacturer
	NDC7001C	Dual N&P-Channel MOSFET	Fairchild
	NDC7001	Dual N&P-Channel MOSFET	Fairchild

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