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NDC7001C - Dual N&P-Channel MOSFET

Datasheet Summary

Description

These dual N & P

Transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance, provide rugged and reliable performance and fast switching

Features

  • Q1 0.51 A, 60 V RDS(ON) = 2 W @ VGS = 10 V RDS(ON) = 4 W @ VGS = 4.5 V.
  • Q2.
  • 0.34 A, 60 V RDS(ON) = 5 W @ VGS =.
  • 10 V RDS(ON) = 7.5 W @ VGS =.
  • 4.5 V.
  • High Saturation Current.
  • High Density Cell Design for Low RDS(ON).
  • Proprietary SUPERSOTt.
  • 6 Package Design Using Copper Lead Frame for Superior Thermal and Electrical Capabilities.
  • This is a Pb.
  • Free Device.

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Datasheet preview – NDC7001C

Datasheet Details

Part number NDC7001C
Manufacturer ON Semiconductor
File Size 359.51 KB
Description Dual N&P-Channel MOSFET
Datasheet download datasheet NDC7001C Datasheet
Additional preview pages of the NDC7001C datasheet.

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Full PDF Text Transcription

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Field Effect Transistor Dual, N & P-Channel, Enhancement Mode NDC7001C General Description These dual N & P−Channel Enhancement Mode Field Effect Transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on−state resistance, provide rugged and reliable performance and fast switching. These device is particularly suited for low voltage, low current, switching, and power supply application. Features • Q1 0.51 A, 60 V RDS(ON) = 2 W @ VGS = 10 V RDS(ON) = 4 W @ VGS = 4.5 V • Q2 –0.34 A, 60 V RDS(ON) = 5 W @ VGS = –10 V RDS(ON) = 7.5 W @ VGS = –4.
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